THIN SILICON DIOXIDE USING THE RAPID THERMAL-OXIDATION (RTO) PROCESS FOR TRENCH CAPACITORS

[1] CHEN IC, P RELIABILITY PHYSIC, P24

[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[3] HORIIKE Y, 1981, JPN J APPL PHYS, V20, P1817

[4] IMAI K, 1985, IEDM, P702

[5] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2594 - 2597

[6] THE OXIDATION OF SHAPED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1278 - 1282

[7] THIN SIO2 INSULATORS GROWN BY RAPID THERMAL-OXIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1353 - 1355

[8] Nicollian E. H., 1982, MOS METAL OXIDE SEMI

[9] Nulman J., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P376

[10] RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 205 - 207

[1] CHEN IC, P RELIABILITY PHYSIC, P24

[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[3] HORIIKE Y, 1981, JPN J APPL PHYS, V20, P1817

[4] IMAI K, 1985, IEDM, P702

[5] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2594 - 2597

[6] THE OXIDATION OF SHAPED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1278 - 1282

[7] THIN SIO2 INSULATORS GROWN BY RAPID THERMAL-OXIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1353 - 1355

[8] Nicollian E. H., 1982, MOS METAL OXIDE SEMI

[9] Nulman J., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P376

[10] RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 205 - 207