LASER IRRADIATION EFFECTS ON HIGH-DOSE IMPLANTED CU AND PB IN POLYCRYSTALLINE ALUMINUM

被引：20

作者：

DELLAMEA, G ^{[1
]}

DONADALLEROSE, L ^{[1
]}

MAZZOLDI, P ^{[1
]}

MIOTELLO, A ^{[1
]}

机构：

[1] IST RIC SCI & TECNOL,POVO,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 46卷 / 3-4期

关键词：

D O I：

10.1080/00337578008209162

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：133 / 139

页数：7

共 17 条

[1] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

PHYSICAL REVIEW LETTERS, 1978, 41 (18) :1246-1249

[2]

BAERI P, 1978, APPL PHYS LETT, V32, P464

[3]

BASOV NG, 1969, SOV PHYS TECH PHYS-U, V13, P1581

[4] 2-STAGE LASER ANNEALING OF LATTICE DISORDER IN PHOSPHORUS IMPLANTED SILICON [J].

BATTAGLIN, G ;

DELLAMEA, G ;

DRIGO, AV ;

FOTI, G ;

BENTINI, GG ;

SERVIDORI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01) :347-352

[5]

CARSLAW, 1959, CONDUCTION HEAT SOLI, pCH11

[6] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[7] REFLECTIVITY OF METALS AT HIGH-TEMPERATURES HEATED BY PULSED LASER [J].

CHAN, PW ;

CHAN, YW ;

NG, HS .

PHYSICS LETTERS A, 1977, 61 (03) :151-153

[8]

DELLAMEA G, 1978, AUG WORKSH LAS ANN C

[9]

HARRINGTON RE, 1976, J APPL PHYS, V38, P3266

[10]

HIRANO K, 1978, J NUCL MAT, P6970

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