DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF NEAR-SURFACE HOLE AND ELECTRON TRAPS IN ZN-DOPED INP USING HIGH BARRIER YB/P-INP SCHOTTKY DIODES

被引：9

作者：

SINGH, A ^{[1
]}

ANDERSON, WA ^{[1
]}

机构：

[1] SUNY BUFFALO,CTR ELECTR & ELECTROOPT MAT,DEPT ELECT & COMP ENGN,BUFFALO,NY 14260

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3999 / 4005

页数：7

共 17 条

[1]

BREMOND G, 1982, I PHYS C SERIES, V63, P239

[2] HIGH-EFFICIENCY INDIUM TIN OXIDE INDIUM-PHOSPHIDE SOLAR-CELLS [J].

COUTTS, TJ ;

NASEEM, S .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :164-166

[3] STEADY-STATE AND TRANSIENT CAPACITANCE OF A P-N-JUNCTION IN THE PRESENCE OF HIGH-DENSITY OF DEEP LEVELS [J].

ERON, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1064-1066

[4] DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS [J].

GLOVER, GH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :138-&

[5] DEEP LEVELS IN N-CDTE [J].

ISETT, LC ;

RAYCHAUDHURI, PK .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3605-3612

[6]

Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[8] TEMPERATURE-DEPENDENCE OF PEAK HEIGHTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

ROCKETT, PI ;

PEAKER, AR .

ELECTRONICS LETTERS, 1981, 17 (22) :838-839

[9] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP [J].

SIBILLE, A ;

BOURGOIN, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :956-958

[10] DEEP LEVEL TRANSIENT SPECTROSCOPY OF INTERFACIAL TRAPS AT ION-IMPLANTED ULTRAHIGH P-SI SCHOTTKY BARRIERS [J].

SLOWIK, JH ;

ASHOK, S .

APPLIED PHYSICS LETTERS, 1986, 49 (26) :1784-1786

← 1 2 →