NUMERICAL-ANALYSIS OF GAAS EPITAXIAL-LAYER SCHOTTKY DIODES

被引：7

作者：

ADAMS, JG ^{[1
]}

JELENSKI, A ^{[1
]}

NAVON, DH ^{[1
]}

TANG, TW ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,SCH ENGN,CTR APPL TECHNOL,AMHERST,MA 01003

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 09期

关键词：

D O I：

10.1109/T-ED.1987.23182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1963 / 1970

页数：8

共 15 条

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ADAMS, J ;

TANG, TW .

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[2]

ALMUDARES MAR, 1983, IEE PROC-I, V130, P175, DOI 10.1049/ip-i-1.1983.0032

[3] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].

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SZE, SM .

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[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[5] MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (10) :1141-1150

[6]

GUO SF, 1984, SOLID STATE ELECTRON, V27, P299

[7]

Henisch H K., 1984, SEMICONDUCTOR CONTAC

[8]

JELENSKI A, 1986, IEEE T MICROWAVE THE, V34

[9]

JELENSKI A, 1985, 15TH P EUR MICR C PA, P279

[10] TEMPERATURE-VARIABLE CHARACTERISTICS AND NOISE IN METAL-SEMICONDUCTOR JUNCTIONS [J].

KOLLBERG, EL ;

ZIRATH, H ;

JELENSKI, A .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (09) :913-922

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