THE EFFECT OF HEAVY-METAL CONTAMINATION IN SIMOX ON RADIATION HARDNESS OF MOS-TRANSISTORS

被引：4

作者：

IPRI, AC

JASTRZEBSKI, L

PETERS, D

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：571 / 573

页数：3

共 9 条

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IPRI, AC .

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