INFLUENCE OF SOLUTE DOPING ON THE HIGH-TEMPERATURE DEFORMATION-BEHAVIOR OF GAAS

被引：15

作者：

GURUSWAMY, S

RAI, RS

FABER, KT

HIRTH, JP

CLEMANS, JE

MCGUIGAN, S

THOMAS, RN

MITCHEL, W

机构：

[1] AT&T ENGN RES CTR,PRINCETON,NJ 08544

[2] WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235

[3] USAF,WRIGHT AERONAUT LABS,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2508 / 2512

页数：5

共 27 条

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[4]

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[5]

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[8] DEFORMATION-BEHAVIOR OF UNDOPED AND IN-DOPED GAAS IN THE TEMPERATURE-RANGE 700-100-DEGREES-C [J].

GURUSWAMY, S ;

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HIRTH, JP .

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[9]

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[10]

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