USE OF LOW-ENERGY ACCELERATORS FOR ION IMPLANTATION

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[2] PERFORMANCE OF A SPUTTER ION SOURCE AND ITS APPLICATION FOR IMPLANTED ION PROFILE EXPERIMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 477 - &

[3] CAIRNS JA, 1970, 1969 P C AT COLL PHE

[4] EFFECTS PRODUCED BY ION BOMBARDMENT AND IMPLANTATION INTO THIN FILMS AND SURFACES [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 455 - &

[5] 2-DIRECTIONAL FOCUSING OF CHARGED PARTICLES WITH A SECTOR-SHAPED, UNIFORM MAGNETIC FIELD [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1951, 22 (10) : 717 - 722

[6] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[7] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[8] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 675 - +

[9] KNOX K, TO BE PUBLISHED

[10] NIELSEN KO, 1957, NUCL INSTRUM METHODS, V1, P289

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[2] PERFORMANCE OF A SPUTTER ION SOURCE AND ITS APPLICATION FOR IMPLANTED ION PROFILE EXPERIMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 477 - &

[3] CAIRNS JA, 1970, 1969 P C AT COLL PHE

[4] EFFECTS PRODUCED BY ION BOMBARDMENT AND IMPLANTATION INTO THIN FILMS AND SURFACES [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 455 - &

[5] 2-DIRECTIONAL FOCUSING OF CHARGED PARTICLES WITH A SECTOR-SHAPED, UNIFORM MAGNETIC FIELD [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1951, 22 (10) : 717 - 722

[6] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[7] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[8] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 675 - +

[9] KNOX K, TO BE PUBLISHED

[10] NIELSEN KO, 1957, NUCL INSTRUM METHODS, V1, P289