ETCHING OF SIO2 AND SI IN A HE-F2 PLASMA

被引：13

作者：

VASILE, MJ

机构：

[1] Bell Laboratories, Murray Hill, NJ 07974, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期

关键词：

PLASMAS - SEMICONDUCTING SILICON;

D O I：

10.1063/1.327971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2510 / 2515

页数：6

共 9 条

[1]

Coburn Julie, COMMUNICATION

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[3] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J].

COBURN, JW ;

KAY, E .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) :33-41

[4] REACTION OF FLUORINE-ATOMS WITH SIO2 [J].

FLAMM, DL ;

MOGAB, CJ ;

SKLAVER, ER .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6211-6213

[5] REFLECTION OF NOBLE GAS IONS AT SOLID SURFACES [J].

HAGSTRUM, HD .

PHYSICAL REVIEW, 1961, 123 (03) :758-&

[6]

MELLIARSMITH CM, 1979, THIN FILM PROCESSES, P497

[7] A COMPARATIVE-STUDY OF THE RADIO-FREQUENCY DISCHARGE IN GAS-MIXTURES OF HELIUM WITH FLUORINE, OXYGEN, NITROGEN, AND ARGON [J].

VASILE, MJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2503-2509

[8] ETCHING OF SILICON WITH XEF2 VAPOR [J].

WINTERS, HF ;

COBURN, JW .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :70-73

[9]

WINTERS HF, 1979, J APPL PHYS, V50, P3189

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