RESPONSES OF INP/GA0.47IN0.53AS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS TO 1530 AND 620 NM ULTRAFAST OPTICAL PULSES

被引：14

作者：

CARRUTHERS, TF ^{[1
]}

DULING, IN ^{[1
]}

AINA, O ^{[1
]}

MATTINGLY, M ^{[1
]}

SERIO, M ^{[1
]}

机构：

[1] ALLIED SIGNAL CORP,COLUMBIA,MD 21045

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.105585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An npn InP/Ga0.47In0.53As/InP heterojunction bipolar transistor with a unity-gain frequency of 15 GHz was illuminated with ultrafast optical pulses at wavelengths of 620 and 1530 nm. The device responded to the pulses with an emitter current transient having a duration of 12 ps, corresponding to a bandwidth of approximately 40 GHz. A slower photocurrent component, with a decay time of approximately 100 ps, was a sensitive function of base bias and, because of the photocarrier dynamics and the grounded-collector circuit configuration, could be nulled out.

引用

页码：327 / 329

页数：3

共 10 条

[1]

CARRUTHERS TF, 1985, 1985 IEEE INT EL DEV, P106

[2]

COOPER DE, 1986, ULTRAFAST PHENOMENA, V5, P117

[3] HIGH-SPEED INGAAS-INP P-I-N PHOTODIODES FABRICATED ON A SEMI-INSULATING SUBSTRATE [J].