GROWTH AND SOME PROPERTIES OF GAXIN1-XSB

[1] BLOM GM, TO BE PUBLISHED

[2] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J]. ELECTRONICS LETTERS, 1970, 6 (09) : 277 - &

[3] GUNN EFFECT AND CONDUCTION BAND STRUCTURE IN GAXIN1-SB ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (13) : 901 - &

[4] NELSON H, 1963, RCA REV, V24, P603

[5] GASB PREPARED FROM NONSTOICHIOMETRIC MELTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 713 - &

[6] GROWTH PROPERTIES OF GASB - STRUCTURE OF RESIDUAL ACCEPTOR CENTRES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (01) : 25 - &

[1] BLOM GM, TO BE PUBLISHED

[2] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J]. ELECTRONICS LETTERS, 1970, 6 (09) : 277 - &

[3] GUNN EFFECT AND CONDUCTION BAND STRUCTURE IN GAXIN1-SB ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (13) : 901 - &

[4] NELSON H, 1963, RCA REV, V24, P603

[5] GASB PREPARED FROM NONSTOICHIOMETRIC MELTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 713 - &

[6] GROWTH PROPERTIES OF GASB - STRUCTURE OF RESIDUAL ACCEPTOR CENTRES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (01) : 25 - &