Close-Spaced Epitaxial Growth of GaAs(x) P(1-x) from Powder GaAs and GaP

被引:11
作者
Purohit, R. K. [1 ]
机构
[1] Solidstate Phys Lab, Delhi 7, India
关键词
D O I
10.1007/BF00741973
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:330 / 332
页数:3
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共 8 条
[1]  
ANTKIV S, 1953, J CHEM PHYS, V31, P1890
[2]   PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES [J].
FROSCH, CJ ;
THURMOND, CD .
JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) :877-&
[4]  
KOIKE T, 1964, STANDFORD LAB RES RE, V8
[6]  
PUROHIT RK, UNPUB
[8]   REFLECTIVITY MEASUREMENTS ON EPITAXIAL GaAs-GaP ALLOYS [J].
Williams, E. W. ;
Jones, C. E. .
SOLID STATE COMMUNICATIONS, 1965, 3 (08) :195-198