DIRECT DETERMINATION OF THE AMBIPOLAR DIFFUSION LENGTH IN STRAINED IN(X)GA(1-X)AS/INP QUANTUM-WELLS BY CATHODOLUMINESCENCE

被引：7

作者：

LEE, RB ^{[1
]}

VAHALA, KJ ^{[1
]}

ZAH, CE ^{[1
]}

BHAT, R ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ambipolar diffusion length is measured in strained InxGa1-xAs/InP quantum wells for several mole fractions in the interval 0.3<x<0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with results of carrier lifetime experiments by M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chuang [Appl. Phys. Lett. 62, 166 (1993)].

引用

页码：2411 / 2412

页数：2

共 5 条

[1] ELECTRONIC-STRUCTURES OF IN1-XGAXAS-INP STRAINED-LAYER QUANTUM WELLS [J].