DIRECT DETERMINATION OF THE AMBIPOLAR DIFFUSION LENGTH IN GAAS/ALGAAS HETEROSTRUCTURES BY CATHODOLUMINESCENCE

被引:71
作者
ZAREM, HA
SERCEL, PC
LEBENS, JA
ENG, LE
YARIV, A
VAHALA, KJ
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D O I
10.1063/1.102226
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O59 [应用物理学];
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页码:1647 / 1649
页数:3
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共 15 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[3]   VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
CASEY, HC ;
MILLER, BI ;
PINKAS, E .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287
[4]   DEGRADATION OF BAND-GAP PHOTOLUMINESCENCE IN GAAS [J].
GUIDOTTI, D ;
HASAN, E ;
HOVEL, HJ ;
ALBERT, M .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :912-914
[5]   CARRIER TRANSPORT PROPERTY IN THE AMORPHOUS-SILICON AMORPHOUS-SILICON CARBIDE MULTILAYER STUDIED BY THE TRANSIENT GRATING TECHNIQUE [J].
HATTORI, K ;
MORI, T ;
OKAMOTO, H ;
HAMAKAWA, Y .
APPLIED PHYSICS LETTERS, 1987, 51 (16) :1259-1261
[6]   THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].
HAYNES, JR ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (05) :835-843
[7]   TWO-DIMENSIONAL EXCITON TRANSPORT IN GAAS/GAALAS QUANTUM WELLS [J].
HILLMER, H ;
HANSMANN, S ;
FORCHEL, A ;
MOROHASHI, M ;
LOPEZ, E ;
MEIER, HP ;
PLOOG, K .
APPLIED PHYSICS LETTERS, 1988, 53 (20) :1937-1939
[8]   CATHODOLUMINESCENCE SYSTEM FOR A SCANNING ELECTRON-MICROSCOPE USING AN OPTICAL FIBER FOR LIGHT COLLECTION [J].
HOENK, ME ;
VAHALA, KJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (02) :226-230
[9]   INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS [J].
KIMERLING, LC ;
PETROFF, P ;
LEAMY, HJ .
APPLIED PHYSICS LETTERS, 1976, 28 (06) :297-300
[10]   CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J].
LEAMY, HJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :R51-R80