MEASUREMENT OF NONRADIATIVE AUGER AND RADIATIVE RECOMBINATION RATES IN STRAINED-LAYER QUANTUM-WELL SYSTEMS

被引：42

作者：

WANG, MC ^{[1
]}

KASH, K ^{[1
]}

ZAH, CE ^{[1
]}

BHAT, R ^{[1
]}

CHUANG, SL ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.109359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To understand the feasibility of using strain to reduce the nonradiative Auger recombination rate of 1.5 mum semiconductor lasers, we have directly measured the radiative and nonradiative Auger recombination rates in strained-layer InGaAs/AlGaInAs quantum-well systems, using time-resolved photoluminescence measurements. We find that the Auger recombination rate can be reduced in either biaxial compressively or tensilely strained quantum-well structures. A longer radiative carrier lifetime is observed for the tensile-strained materials. The effect of strain and quantum confinement on the carrier lifetime is discussed.

引用

页码：166 / 168

页数：3

共 15 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].