COPPER-BASED METALLIZATION IN ULSI STRUCTURES .2. IS CU AHEAD OF ITS TIME AS AN ON-CHIP INTERCONNECT MATERIAL

被引：95

作者：

LI, J

SEIDEL, TE

MAYER, JW

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287

[2] SEMATECH,AUSTIN,TX

来源：

MRS BULLETIN | 1994年 / 19卷 / 08期

关键词：

D O I：

10.1557/S0883769400047692

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：15 / 18

页数：4

共 19 条

[1]

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[3]

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[4]

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HOSOI, N ;

OHSHITA, Y .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2703-2704

[6]

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[7] SELF-ALIGNED PASSIVATION ON COPPER INTERCONNECTION DURABILITY AGAINST OXIDIZING AMBIENT ANNEALING [J].

ITOW, H ;

NAKASAKI, Y ;

MINAMIHABA, G ;

SUGURO, K ;

OKANO, H .

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[8]

KALOYEROS A, 1994, ADV METALLIZATION UL, P569

[9]

KRISHNAN A, 1992, 9TH P INT VLSI MULT, pP226

[10]

LI J, 1994, Patent No. 5277985

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