HIGH-SPEED PLANAR GAAS PHOTOCONDUCTORS WITH SURFACE IMPLANT LAYERS

[1] Anderson G. W., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V789, P154, DOI 10.1117/12.940734

[2] ANDERSON GW, IN PRESS APPL OPT, V27

[3] GAIN AND BANDWIDTH OF FAST NEAR-INFRARED PHOTODETECTORS - A COMPARISON OF DIODES, PHOTOTRANSISTORS, AND PHOTOCONDUCTIVE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1420 - 1431

[4] Borsuk G. M., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V639, P2, DOI 10.1117/12.964317

[5] PHOTODETECTORS FOR ACOUSTOOPTIC SIGNAL PROCESSORS [J]. PROCEEDINGS OF THE IEEE, 1981, 69 (01) : 100 - 118

[6] CARRUTHERS TF, 1984, PICOSECOND OPTOELECT, P339

[7] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650

[8] MONOLITHIC INTEGRATED RECEIVER FRONT END CONSISTING OF A PHOTOCONDUCTIVE DETECTOR AND A GAAS SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 681 - 683

[9] PLANAR MONOLITHIC INTEGRATION OF A GAAS PHOTOCONDUCTOR AND A GAAS FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 193 - 195

[10] HIGH-SPEED PHOTOCONDUCTIVE DETECTORS USING GAINAS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 269 - 272

[1] Anderson G. W., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V789, P154, DOI 10.1117/12.940734

[2] ANDERSON GW, IN PRESS APPL OPT, V27

[3] GAIN AND BANDWIDTH OF FAST NEAR-INFRARED PHOTODETECTORS - A COMPARISON OF DIODES, PHOTOTRANSISTORS, AND PHOTOCONDUCTIVE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1420 - 1431

[4] Borsuk G. M., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V639, P2, DOI 10.1117/12.964317

[5] PHOTODETECTORS FOR ACOUSTOOPTIC SIGNAL PROCESSORS [J]. PROCEEDINGS OF THE IEEE, 1981, 69 (01) : 100 - 118

[6] CARRUTHERS TF, 1984, PICOSECOND OPTOELECT, P339

[7] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650

[8] MONOLITHIC INTEGRATED RECEIVER FRONT END CONSISTING OF A PHOTOCONDUCTIVE DETECTOR AND A GAAS SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 681 - 683

[9] PLANAR MONOLITHIC INTEGRATION OF A GAAS PHOTOCONDUCTOR AND A GAAS FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 193 - 195

[10] HIGH-SPEED PHOTOCONDUCTIVE DETECTORS USING GAINAS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 269 - 272