PLANAR MONOLITHIC INTEGRATION OF A GAAS PHOTOCONDUCTOR AND A GAAS FIELD-EFFECT TRANSISTOR

被引：9

作者：

DECOSTER, D ^{[1
]}

VILCOT, JP ^{[1
]}

CONSTANT, M ^{[1
]}

RAMDANI, J ^{[1
]}

VERRIELE, H ^{[1
]}

VANBREMEERSCH, J ^{[1
]}

机构：

[1] UNIV LILLE 1,SPECTROCHIM INFRAROUGE & RAMON LAB,CNRS,LAB 2641,F-59655 VILLENEUVE DASCQ,FRANCE

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 04期

关键词：

D O I：

10.1049/el:19860135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / 195

页数：3

共 11 条

[1] INTERDIGITATED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS [J].

CHEN, CY ;

PANG, YM ;

ALAVI, K ;

CHO, AY ;

GARBINSKI, PA .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :99-101

[2]

DECOSTER D, I PHYS C SER, V74, P463

[3] PHOTOCONDUCTOR RECEIVER SENSITIVITY [J].

FORREST, SR .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :536-539

[4] HIGH-SPEED PHOTOCONDUCTIVE DETECTORS USING GAINAS [J].

GAMMEL, JC ;

OHNO, H ;

BALLANTYNE, JM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :269-272

[5] PLANAR INGAAS/INP PINFET FABRICATED BY BE ION-IMPLANTATION [J].

HATA, S ;

IKEDA, M ;

AMANO, T ;

MOTOSUGI, G ;

KURUMADA, K .

ELECTRONICS LETTERS, 1984, 20 (22) :947-948

[6]

KLEIN HJ, 1982, THIN SOLID FILMS, V90, P371, DOI 10.1016/0040-6090(82)90534-X

[7]

RACZY L, 1985, TECHNOLOGIE COMPOSAN

[8]

SZE SM, 1981, PHYS SEMICONDUCTOR D, pCH13

[9] TEMPERATURE EFFECTS ON HIGH-GAIN PHOTOCONDUCTIVE DETECTORS [J].

VILCOT, JP ;

VATERKOWSKI, JL ;

DECOSTER, D ;

CONSTANT, M .

ELECTRONICS LETTERS, 1984, 20 (02) :86-88

[10] III-V PHOTOCONDUCTIVE DETECTORS - GAIN AND NOISE STUDIES [J].

VILCOT, JP ;

CONSTANT, M ;

DECOSTER, D ;

FAUQUEMBERGUE, R .

PHYSICA B & C, 1985, 129 (1-3) :488-492

← 1 2 →