TRANSITION REGIONS IN EPITAXIALLY GROWN SEMICONDUCTOR-FILMS AND DEVICES

被引:10
作者
ALEKSANDROV, LN
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D O I
10.1016/0040-6090(78)90087-1
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T [工业技术];
学科分类号
08 ;
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页码:13 / 24
页数:12
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[1]  
AGRAFENIN YV, 1974, GENERATSIYA SVCH KOL, P344
[2]   INTERACTION OF A SCREW DISLOCATION WITH INTERFACES DURING THIN-FILMS GROWTH [J].
ALEKSANDROV, LN ;
ENTIN, IA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (02) :665-672
[3]   STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J].
ALEKSANDROV, LN ;
LOVYAGIN, RN .
THIN SOLID FILMS, 1974, 20 (01) :1-10
[4]  
ALEKSANDROV LN, 1972, KRISTALLOGRAFIYA+, V17, P1031
[5]   FORMATION AND PROPERTIES OF TRANSITION LAYERS IN EPITAXIAL-FILMS [J].
ALEKSANDROV, LN .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :103-112
[6]  
ALEKSANDROV LN, 1968, SEMICONDUCTOR PHYSIC, P3
[7]  
ALEKSANDROV LN, 1972, PHYS STATUS SOLIDI A, V9, P11
[8]  
ALEKSANDROV LN, 1975, SOV PHYS-CRYSTALLOGR, V20, P1140
[9]  
ALEKSANDROV LN, 1972, FORMATION KINETICS S
[10]  
ALEKSANDROV LN, 1970, VORTRAGS MIKROELEKTR, P13