BLANKET LPCVD TUNGSTEN SILICIDE TECHNOLOGY FOR SMART POWER APPLICATIONS

被引：14

作者：

SHENAI, K

PIACENTE, PA

SAIA, R

BALIGA, BJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 06期

关键词：

D O I：

10.1109/55.31743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：270 / 273

页数：4

共 13 条

[1]

BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[2]

GOROWITZ B, 1987, VLSI ELECTRONICS MIC, V15, P159

[3]

HU CM, 1984, IEEE T ELECTRON DEV, V31, P1693

[4]

LIN HC, 1975, IEEE T ELECTRON DEV, VED22, P255

[5] PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J].

SARASWAT, KC ;

BRORS, DL ;

FAIR, JA ;

MONNIG, KA ;

BEYERS, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1497-1505

[6] A 50-V, 0.7-M-OMEGA.CM2, VERTICAL-POWER DMOSFET [J].

SHENAI, K ;

KORMAN, CS ;

BALIGA, BJ ;

PIACENTE, PA .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) :101-103

[7] ACCURATE BARRIER MODELING OF METAL AND SILICIDE CONTACTS [J].

SHENAI, K ;

SANGIORGI, E ;

SARASWAT, KC ;

SWANSON, RM ;

DUTTON, RW .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :145-147

[8]

SHENAI K, 1988, ADHESION SOLIDS, V119, P177

[9]

SHENAI K, 1988, 1ST P INT S ADV MAT, V88, P155

[10]

SHENAI K, 1989, TUNGSTEN OTHER REFRA, P333

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