A 50-V, 0.7-M-OMEGA.CM2, VERTICAL-POWER DMOSFET

被引：21

作者：

SHENAI, K

KORMAN, CS

BALIGA, BJ

PIACENTE, PA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：101 / 103

页数：3

共 10 条

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[3]

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[6]

SHENAI K, 1987, 1987 FALL M EL SOC, P1005

[7] MODELING OF THE ON-RESISTANCE OF LDMOS, VDMOS, AND VMOS POWER TRANSISTORS [J].

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[8] A 600-VOLT MOSFET DESIGNED FOR LOW ON-RESISTANCE [J].

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[9]

1986, POWERTECHNICS MAG, P14

[10]

1986, ELECTRONICS 0724, P81

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