ACCURATE BARRIER MODELING OF METAL AND SILICIDE CONTACTS

被引：12

作者：

SHENAI, K

SANGIORGI, E

SARASWAT, KC

SWANSON, RM

DUTTON, RW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期

关键词：

D O I：

10.1109/EDL.1984.25864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：145 / 147

页数：3

共 14 条

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[6]

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[7] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

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[9]

HENISCH WK, 1957, RECTIFYING SEMICONDU

[10] VLSI PROCESS MODELING - SUPREM-III [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1438-1453

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