ROLE OF DEFECTS IN THE ANNEALING BEHAVIOR OF RF-SPUTTERED CDS FILMS

被引：16

作者：

MARTIL, I ^{[1
]}

DEDIEGO, N ^{[1
]}

HIDALGO, C ^{[1
]}

机构：

[1] UNIV COMPLUTENSE MADRID,FAC CIENCIAS FIS,DEPT FIS ESTADO SOLIDO,E-28040 MADRID,SPAIN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 02期

关键词：

SPUTTERING;

D O I：

10.1002/pssa.2210940220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The defect structure of CdS thin films grown by RF sputtering is studied by electrical and positron annihilation measurements after different thermal treatments. It is shown that for annealing temperatures below 475 K desorbed impurities cause an increase in both, the carrier mobility and concentration. For annealing temperatures above 475 K, positron annihilation measurements reveal a S-vacancy agglomeration in aggreement with the electrical measurements.

引用

页码：587 / 593

页数：7

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