VIBRATIONAL CHARACTERISTICS OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON

[1] A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408): : 64 - &

[2] HYDROGEN-ACCEPTOR PAIRS IN SILICON - REPLY [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 403 - 403

[3] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982

[4] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +

[5] CAPIZZI M, 1986, IN PRESS 18TH P INT

[6] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &

[7] HYDROGEN-ACCEPTOR PAIRS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 402 - 402

[8] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864

[9] HALLER EE, 1986, ADV SOLID STATE PHYS, V26, P203

[10] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5525 - 5528

[1] A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408): : 64 - &

[2] HYDROGEN-ACCEPTOR PAIRS IN SILICON - REPLY [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 403 - 403

[3] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982

[4] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +

[5] CAPIZZI M, 1986, IN PRESS 18TH P INT

[6] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &

[7] HYDROGEN-ACCEPTOR PAIRS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 402 - 402

[8] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864

[9] HALLER EE, 1986, ADV SOLID STATE PHYS, V26, P203

[10] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5525 - 5528