HOT CARRIER TRANSPORT EFFECT IN SCHOTTKY-BARRIER DIODE GROWN BY MBE

被引：5

作者：

HWANG, CG

DUTTON, RW

机构：

[1] Stanford Univ, USA, Stanford Univ, USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 05期

关键词：

Manuscript received March 10; 1987; revised August 13; 1987 and De- cember 9; 1987. This work was supported in part by the Semiconductor Research Corporation under Contract SRC 86-1 1-107; and by DARPA under Contract DAAL 01-86-K-0101. The review of this paper was arranged by Editor A. J. Strojwas. The authors are with Integrated Circuit Laboratory; Stanford University; Stanford; CA 94305. IEEE Log Number 8719394;

D O I：

10.1109/43.3195

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

10

引用

收藏

页码：578 / 583

页数：6

相关论文

共 10 条

[1] CURRENT TRANSPORT IN SCHOTTKY-BARRIER DIODES [J].

BACCARANI, G .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4122-4126

[2] MONTE-CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES [J].

BACCARANI, G ;

MAZZONE, AM .

ELECTRONICS LETTERS, 1976, 12 (02) :59-60

[3] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[4]

Hwang C. G., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P563

[5]

HWANG CG, 1987, IEEE T ELECTRON DEV, V34, P154, DOI 10.1109/T-ED.1987.22901

[6] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].

SHANNON, JM .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543

[7] FIELD-ENHANCED TUNNELING AND BARRIER LOWERING IN AL-N+GAAS-NGAAS SCHOTTKY CONTACTS GROWN BY MBE [J].

SHENAI, K ;

EGLASH, SJ ;

DUTTON, RW ;

ZURAKOWSKI, MP ;

SPICER, WE .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :329-332

[8] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J].

STRATTON, R .

PHYSICAL REVIEW, 1962, 126 (06) :2002-&

[9]

Ueno K., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P82

[10]

YU Z, 1985, SEDAN 3 GENERALIZED