GEM/SIN STRAINED-LAYER SUPERLATTICES FABRICATED BY PHASE-LOCKED EPITAXY

被引：25

作者：

MIKI, K

SAKAMOTO, K

SAKAMOTO, T

OKUMURA, H

TAKAHASHI, N

YOSHIDA, S

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(89)90438-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：444 / 446

页数：3

共 6 条

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[2] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE
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[J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14
[3] OKUMURA H, 1988, 2ND INT C FORM SEM I
[4] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS
OSBOURN, GC
[J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5126 - 5128
[5] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GEXSI1-X MBE GROWTH ON SI(001) SUBSTRATES
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05): : 666 - 670
[6] SI(001)-2X1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH-TEMPERATURE ANNEALING
SAKAMOTO, T
HASHIGUCHI, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L78 - L80