NEW APPROACH TO LATTICE DAMAGE GETTERING

被引：22

作者：

PEARCE, CW ^{[1
]}

ZALECKAS, VJ ^{[1
]}

机构：

[1] WESTERN ELECT CO INC,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

D O I：

10.1149/1.2129298

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have successfully used a Nd:YAG laser to introduce controlled amounts of lattice damage in silicon wafers. The resultant damage was found to be an effective getter for metallic impurities when applied prior to an emitter diffusion in a bipolar integrated circuit fabrication process. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1436 / 1437

页数：2

共 5 条

[1]

LAWRENCE JE, SEMICONDUCTOR SILICO, P17

[2] ROLE OF METALLIC CONTAMINATION IN FORMATION OF SAUCER PIT DEFECTS IN EPITAXIAL SILICON [J].