ROLE OF METALLIC CONTAMINATION IN FORMATION OF SAUCER PIT DEFECTS IN EPITAXIAL SILICON

被引：34

作者：

PEARCE, CW ^{[1
]}

MCMAHON, RG ^{[1
]}

机构：

[1] WESTERN ELECT CO INC,ALLENTOWN,PA 18103

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期

关键词：

D O I：

10.1116/1.569244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：40 / 43

页数：4

共 11 条

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[4]

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[9] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].

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JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :263-271

[10] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :948-+

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