FIELD EVAPORATION OF METAL ATOMS ONTO INSULATOR CONDUCTING SUBSTRATE USING ATOMIC-FORCE MICROSCOPE

被引:14
作者
HOSAKA, S
KOYANAGI, H
机构
[1] Advanced Research Laboratory, Hitachi Ltd, Kokubunji, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 9B期
关键词
FIELD EVAPORATION; AFM; DOT FORMATION; ULTRAHIGH-DENSITY RECORDING; DIRECT WRITING;
D O I
10.1143/JJAP.33.L1358
中图分类号
O59 [应用物理学];
学科分类号
摘要
The feasibility of field-evaporating metal atoms onto an insulator/conducting substrate has been investigated. Theoretical and experimental studies clarify that field evaporation is possible in an atomic force microscope (AFM) metal probe/vacuum/thin insulator/conductor configuration. Theoretically, field evaporation is easily achieved on thin SiO2 insulators of less than 100 Angstrom, though image potential and electric field weaken in the presence of an insulating layer. Experiments confirm that ultrasmall gold dots can be formed on a natural SiO2/Si substrate with a threshold voltage of around 10 V. Small dots of 15 nm diameter can be obtained.
引用
收藏
页码:L1358 / L1361
页数:4
相关论文
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