ECR PLASMA-ETCHING WITH HEAVY HALOGEN IONS

被引:19
作者
FUJIWARA, N
SAWAI, H
YONEDA, M
NISHIOKA, K
ABE, H
机构
[1] LSI Research and Development Laboratory Mitsubishi Electric Corporation, ltami, Hyogo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期
关键词
Electron cyclotron; Enrgy distribution; Ion temperature; Magnetic field; Plasma etching; Plasma instability; Resonance;
D O I
10.1143/JJAP.29.2223
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown that the ECR plasma, which contains heavy halogen ions and other light ions, is effective as a dry etching technique for fabrication of VLSI devices. The ion temperature, which is one of the most important parameters for etching fine features, is greatly reduced by using a Cl2/He mixture gas and by controlling the pressure. By this method, strong anisotropic etching of poly-Si is realized with high selectivity to SiO2. Hydrogen halide gases are suitable gases for the ECR plasma etching process, because they produce heavy halogen ions and protons. In particular, using HBr or HI gas produces a strong anisotropic feature with no micro-loading effects. The ion temperature of Br+ions and I+ions is 1.0∼1.1 eV, which is about half that of Cl+ions. © 1990 IOP Publishing Ltd.
引用
收藏
页码:2223 / 2228
页数:6
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