REACTIVE ION-BEAM ETCHING USING A BROAD BEAM ECR ION-SOURCE

[1] DOWNEY DF, 1981, SOLID STATE TECHNOL, V24, P121

[2] SI AND SIO2 ETCHING CHARACTERISTICS BY FLUOROCARBON ION-BEAM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2309 - 2310

[3] GENERATION OF ENERGETIC ELECTRONS BY ELECTRON-CYCLOTRON HEATING IN A MAGNETIC-MIRROR FIELD [J]. NUCLEAR FUSION, 1973, 13 (03) : 351 - 361

[4] FABRICATION OF SIO2 BLAZED HOLOGRAPHIC GRATINGS BY REACTIVE ION-ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L126 - L128

[5] SELECTIVE ETCHING OF SI RELATIVE TO SIO2 WITHOUT UNDERCUTTING BY CBRF3 PLASMA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 768 - 770

[6] SELECTIVE ETCHING OF SIO2 RELATIVE TO SI BY PLASMA REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 587 - 594

[7] PRODUCTION OF LARGE AREA HIGH CURRENT ION-BEAMS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (08) : 1193 - &

[8] MEASUREMENT OF POWER TRANSFER EFFICIENCY FROM MICROWAVE FIELD TO PLASMA UNDER ECR CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) : 1993 - 1998

[9] MICROWAVE ION-SOURCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (07) : 762 - 766

[10] MICROWAVE PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) : 1979 - 1984

[1] DOWNEY DF, 1981, SOLID STATE TECHNOL, V24, P121

[2] SI AND SIO2 ETCHING CHARACTERISTICS BY FLUOROCARBON ION-BEAM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2309 - 2310

[3] GENERATION OF ENERGETIC ELECTRONS BY ELECTRON-CYCLOTRON HEATING IN A MAGNETIC-MIRROR FIELD [J]. NUCLEAR FUSION, 1973, 13 (03) : 351 - 361

[4] FABRICATION OF SIO2 BLAZED HOLOGRAPHIC GRATINGS BY REACTIVE ION-ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L126 - L128

[5] SELECTIVE ETCHING OF SI RELATIVE TO SIO2 WITHOUT UNDERCUTTING BY CBRF3 PLASMA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 768 - 770

[6] SELECTIVE ETCHING OF SIO2 RELATIVE TO SI BY PLASMA REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 587 - 594

[7] PRODUCTION OF LARGE AREA HIGH CURRENT ION-BEAMS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (08) : 1193 - &

[8] MEASUREMENT OF POWER TRANSFER EFFICIENCY FROM MICROWAVE FIELD TO PLASMA UNDER ECR CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) : 1993 - 1998

[9] MICROWAVE ION-SOURCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (07) : 762 - 766

[10] MICROWAVE PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) : 1979 - 1984