SELECTIVE ETCHING OF SIO2 RELATIVE TO SI BY PLASMA REACTIVE SPUTTER ETCHING

[1] ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2] DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1023 - 1029

[3] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[4] COBURN JW, 1979, SOLID STATE TECHNOL, V22, P117

[5] COBURN SW, 1978, J VACUUM SCI TECHNOL, V15, P327

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] RF SPUTTER ETCHING BY FLUORO-CHLORO-HYDROCARBON GASES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 435 - 438

[8] ETCHING CHARACTERISTICS OF SILICATE GLASS-FILMS IN CF4 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : 1258 - 1262

[9] KAUFMAN HR, 1961, ELECTROSTATIC PROPUL, P3

[10] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[1] ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2] DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1023 - 1029

[3] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[4] COBURN JW, 1979, SOLID STATE TECHNOL, V22, P117

[5] COBURN SW, 1978, J VACUUM SCI TECHNOL, V15, P327

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] RF SPUTTER ETCHING BY FLUORO-CHLORO-HYDROCARBON GASES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 435 - 438

[8] ETCHING CHARACTERISTICS OF SILICATE GLASS-FILMS IN CF4 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : 1258 - 1262

[9] KAUFMAN HR, 1961, ELECTROSTATIC PROPUL, P3

[10] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326