ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE

[81] THE PHYSICAL INTERPRETATION OF MEAN FREE PATH AND THE INTEGRAL METHOD [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1958, 2 (03) : 200 - 204

[82] THEORETICAL PHONON LIMITED ELECTRON MOBILITY IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1095 - &

[83] DRIFT VELOCITY AND ANISOTROPY OF HOT ELECTRONS IN N GERMANIUM [J]. PHYSICAL REVIEW, 1962, 126 (05): : 1737 - &

[84] SCHMIDTTIEDEMAN.KJ, 1962, EXPERIMENTELLE UNTER, V1

[85] SCHMIDTTIEDEMAN.KJ, 1962, 6 P INT C SEM PHYS E, P191

[86] BEWEGLICHKEITSANISOTROPIE UND RELAXATION WARMER ELEKTRONEN IN N-TYP GERMANIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1963, 172 (01): : 68 - &

[87] ON THE MOBILITY OF ELECTRONS IN PURE NON-POLAR INSULATORS [J]. PHYSICAL REVIEW, 1948, 73 (06): : 549 - 564

[88] A CALCULATION OF DEFORMATION POTENTIALS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (523): : 934 - &

[89] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[90] THE INFLUENCE OF INTERELECTRONIC COLLISIONS ON CONDUCTION AND BREAKDOWN IN COVALENT SEMI-CONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 242 (1230): : 355 - 373

[81] THE PHYSICAL INTERPRETATION OF MEAN FREE PATH AND THE INTEGRAL METHOD [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1958, 2 (03) : 200 - 204

[82] THEORETICAL PHONON LIMITED ELECTRON MOBILITY IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1095 - &

[83] DRIFT VELOCITY AND ANISOTROPY OF HOT ELECTRONS IN N GERMANIUM [J]. PHYSICAL REVIEW, 1962, 126 (05): : 1737 - &

[84] SCHMIDTTIEDEMAN.KJ, 1962, EXPERIMENTELLE UNTER, V1

[85] SCHMIDTTIEDEMAN.KJ, 1962, 6 P INT C SEM PHYS E, P191

[86] BEWEGLICHKEITSANISOTROPIE UND RELAXATION WARMER ELEKTRONEN IN N-TYP GERMANIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1963, 172 (01): : 68 - &

[87] ON THE MOBILITY OF ELECTRONS IN PURE NON-POLAR INSULATORS [J]. PHYSICAL REVIEW, 1948, 73 (06): : 549 - 564

[88] A CALCULATION OF DEFORMATION POTENTIALS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (523): : 934 - &

[89] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[90] THE INFLUENCE OF INTERELECTRONIC COLLISIONS ON CONDUCTION AND BREAKDOWN IN COVALENT SEMI-CONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 242 (1230): : 355 - 373