ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE

[41] GIBSON AF, 1960, 5 P INT C SEM PRAG, P112

[42] GOROFF L, 1963, PHYS REV, V132, P1080

[43] GUNN GB, 1957, PROGR SEMICOND LONDO, V2, P213

[44] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J]. PHYSICAL REVIEW, 1967, 161 (03): : 756 - &

[45] TEMPERATURE DEPENDENCE OF MOBILITY OF WARM CARRIERS IN GERMANIUM AND SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (12) : 1755 - &

[46] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1956, 104 (05): : 1281 - 1290

[47] SOME EFFECTS OF MECHANICAL STRESS ON BREAKDOWN VOLTAGE OF P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3884 - &

[48] GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (05) : 927 - +

[49] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[50] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[41] GIBSON AF, 1960, 5 P INT C SEM PRAG, P112

[42] GOROFF L, 1963, PHYS REV, V132, P1080

[43] GUNN GB, 1957, PROGR SEMICOND LONDO, V2, P213

[44] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J]. PHYSICAL REVIEW, 1967, 161 (03): : 756 - &

[45] TEMPERATURE DEPENDENCE OF MOBILITY OF WARM CARRIERS IN GERMANIUM AND SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (12) : 1755 - &

[46] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1956, 104 (05): : 1281 - 1290

[47] SOME EFFECTS OF MECHANICAL STRESS ON BREAKDOWN VOLTAGE OF P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3884 - &

[48] GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (05) : 927 - +

[49] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[50] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961