SOME EFFECTS OF MECHANICAL STRESS ON BREAKDOWN VOLTAGE OF P-N JUNCTIONS

被引：18

作者：

HAUSER, JR

WORTMAN, JJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.1707942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3884 / &

共 28 条

[1] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1957, 108 (01) :29-34

[2] LOWERING BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS BY STRESS [J].

GOETZBERGER, A ;

FINCH, RH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1851-&

[3]

GOROFF I, 1963, PHYS REV, V132, P1080

[4] THE EFFECTS OF PRESSURE AND TEMPERATURE ON THE RESISTANCE OF P-N JUNCTIONS IN GERMANIUM [J].

HALL, HH ;

BARDEEN, J ;

PEARSON, GL .

PHYSICAL REVIEW, 1951, 84 (01) :129-132

[5] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS [J].

HASEGAWA, H .

PHYSICAL REVIEW, 1963, 129 (03) :1029-&

[6] THRESHOLD ENERGY FOR AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

HAUSER, JR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :507-&

[7] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J].

HENSEL, JC ;

HASEGAWA, H ;

NAKAYAMA, M .

PHYSICAL REVIEW, 1965, 138 (1A) :A225-&

[8] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].

HERRING, C .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290

[9] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].

HERRING, C ;

VOGT, E .

PHYSICAL REVIEW, 1956, 101 (03) :944-961

[10] EFFECT OF UNIAXIAL STRESS ON GERMANIUM P-N JUNCTIONS [J].

IMAI, T ;

UCHIDA, M ;

SATO, H ;

KOBAYASHI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (02) :102-+

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