EFFECT OF UNIAXIAL STRESS ON GERMANIUM P-N JUNCTIONS

被引：19

作者：

IMAI, T

UCHIDA, M

SATO, H

KOBAYASHI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 02期

关键词：

D O I：

10.1143/JJAP.4.102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：102 / +

页数：1

相关论文

共 11 条

[1] ANISOTROPIC STRESS EFFECT ON EXCESS CURRENT IN TUNNEL DIODES
BERNARD, W
RINDNER, W
ROTH, H
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1860 - &
[2] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS
ESAKI, L
MIYAHARA, Y
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &
[3] Imai T., 1963, JPN J APPL PHYS, V2, P463, DOI 10.1143/JJAP.2.463
[4] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES
LEDERHANDLER, SR
GIACOLETTO, LJ
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04): : 477 - 483
[5] MATSUKURA Y, 1964, JPN J APPL PHYS, V3, P256
[6] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS .2.
RINDNER, W
BRAUN, I
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 1958 - &
[7] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS
RINDNER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2479 - +
[8] EXPERIMENTAL TUNNEL-DIODE ELECTROMECHANICAL TRANSDUCER ELEMENTS AND THEIR USE IN TUNNEL-DIODE MICROPHONES
ROGERS, ES
[J]. JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1962, 34 (07) : 883 - &
[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[10] MOLTEN DIFFUSED SILICON TRANSISTORS
TAUCHI, S
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (04) : 216 - &