IMPURITY BAND CONDUCTION IN CESIUM ADSORBED N-CHANNEL SI INVERSION LAYERS

被引：6

作者：

KAWAGUCHI, Y ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO,JAPAN

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90109-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：33 / 41

页数：9

相关论文

共 7 条

[1] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM
ALLEN, FG
GOBELI, GW
[J]. PHYSICAL REVIEW, 1966, 144 (02): : 558 - &
[2] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES
HUNG, CS
GLIESSMAN, JR
[J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236
[3] KAWAGUCHI Y, 1974, JPN J APPL PHYS, P429
[4] STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON SI-CS-O SURFACE
LEVINE, JD
[J]. SURFACE SCIENCE, 1973, 34 (01) : 90 - 107
[5] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS
PEARSON, GL
BARDEEN, J
[J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883
[6] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[7] ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES
YAMANOUCHI, C
MIZUGUCHI, K
SASAKI, W
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) : 859 - +