PREBAKING AND SILICON EPITAXIAL-GROWTH ENHANCED BY UV-RADIATION

被引：14

作者：

ISHITANI, A ^{[1
]}

OHSHITA, Y ^{[1
]}

TANIGAKI, K ^{[1
]}

TAKADA, K ^{[1
]}

ITOH, S ^{[1
]}

机构：

[1] NEC CORP,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2224 / 2229

页数：6

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