EPITAXIAL-GROWTH OF SILICON WITH HG-XE LAMP LIGHT IRRADIATION

被引：5

作者：

ISHITANI, A

KANAMORI, M

TSUYA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2956 / 2959

页数：4

共 8 条

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[7] SINGLE-CRYSTAL SILICON FILMS ON AMORPHOUS INSULATORS - GROWTH BY LATERAL NUCLEATED EPITAXY USING SCANNING LASER AND ELECTRON-BEAMS AND EVALUATION BY ELECTRON BACKSCATTERING CONTRAST [J].

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