SINGLE-CRYSTAL SILICON FILMS ON AMORPHOUS INSULATORS - GROWTH BY LATERAL NUCLEATED EPITAXY USING SCANNING LASER AND ELECTRON-BEAMS AND EVALUATION BY ELECTRON BACKSCATTERING CONTRAST

被引：14

作者：

SEDGWICK, TO ^{[1
]}

GEISS, RH ^{[1
]}

DEPP, SW ^{[1
]}

HANCHETT, VE ^{[1
]}

HUTH, BG ^{[1
]}

GRAF, V ^{[1
]}

SILVESTRI, VJ ^{[1
]}

机构：

[1] IBM CORP RES, SAN JOSE, CA 95153 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123682

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2802 / 2808

页数：7

共 25 条

[1]

Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[2]

BILLIG E, 1955, ACTA CRYSTALLOGR, V8, P353

[3]

BOOKER GR, 1975, ELECTRON MICROSCOP 4, P1199

[4]

CULLEN GW, 1977, HETEROEPITAXIAL SEMI

[5] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[6] SUMMARY ABSTRACT - SILICON GRAPHOEPITAXY [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :229-230

[7] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[8] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456

[9]

GEIS MW, 1981, JUL ICVGEV ACCGV COR

[10]

GEISS RH, 1981, MICROBEAM ANAL 1981, P119

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