BARRIER HEIGHT MODIFICATION IN HEAT-TREATED ALUMINUM SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON

被引：7

作者：

KRISHNA, KV

GUHA, S

NARASIMHAN, KL

机构：

来源：

SOLAR CELLS | 1981年 / 4卷 / 02期

关键词：

D O I：

10.1016/0379-6787(81)90065-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：153 / 156

页数：4

共 16 条

[1]

ABKOWITZ M, 1976, COMMUN PHYS, V1, P175

[2] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES [J].

BASTERFIELD, J ;

SHANNON, JM ;

GILL, A .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :290-&

[3]

BRODSKY MH, 1979, TOP APPL PHYS, V36

[4] PEAKED SCHOTTKY-BARRIER SOLAR-CELLS BY AL-SI METALLURGICAL REACTIONS [J].

CARD, HC ;

YANG, ES ;

PANAYOTATOS, P .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :643-645

[5] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[6] AMORPHOUS SILICON SOLAR-CELLS [J].

CARLSON, DE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :449-453

[7] ON LIGHT-INDUCED EFFECT IN AMORPHOUS HYDROGENATED SILICON [J].

GUHA, S ;

NARASIMHAN, KL ;

PIETRUSZKO, SM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :859-860

[8] FIELD-EFFECT MEASUREMENT ON THE FILM-SUBSTRATE AND FILM-VACUUM INTERFACES OF A-SI-H [J].

GUHA, S ;

NARASIMHAN, KL ;

NAVKHANDEWALA, RV ;

PIETRUSZKO, SM .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :572-573

[9]

PONPON JP, 1975, J PHYS LETT-PARIS, V36, pL149, DOI 10.1051/jphyslet:01975003605014900

[10] PHOTO AND DARK CONDUCTIVITY OF DOPED AMORPHOUS SILICON [J].

REHM, W ;

FISCHER, R ;

STUKE, J ;

WAGNER, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02) :539-547

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