GROWTH AND OPTICAL-DEVICE EVALUATION OF P-TYPE CONDUCTIVE LEC GAAS CO-DOPED WITH IN AND ZN

被引：1

作者：

FUJII, T ^{[1
]}

FUKUDA, T ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 06期

关键词：

D O I：

10.1007/BF02655493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 409

页数：5

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