A PILLAR-SHAPED VIA STRUCTURE IN A CU-POLYIMIDE MULTILAYER SUBSTRATE

被引：4

作者：

IWASAKI, N ^{[1
]}

YAMAGUCHI, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL ELECTR TECHNOL CORP, MITAKA, TOKYO 181, JAPAN

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1990年 / 13卷 / 02期

关键词：

Copper Conductor Formation - Multilayer Substrate - Pattern Electroplating - Pillar-Shaped Via Structure - Positive Photoresist;

D O I：

10.1109/33.56181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes a new pillar-shaped via structure in a Cu-polyimide multilayer substrate and its novel fabrication process. The process requires that a fine rectangular via conductor is formed by pattern electroplating using a thick positive photoresist. In addition, a flat polyimide dielectric is formed only by the photolithographic process using a photosensitive polyimide precursor. The resulting pillar-shaped via conductor is 30-µ m square and 25-µ m thick per layer. The area occupied by this via conductor is 25% smaller than a conventional via not filled with copper conductor. Its signal line density is twice as high, and the thermal resistance is about 50% less than a conventional via. This new structure is suitable for high-speed signal transmission in a Cu-polyimide multilayer substrate. © 1990 IEEE

引用

页码：440 / 443

页数：4

共 12 条

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