REACTION-MECHANISMS OF THE RADIO-FREQUENCY GLOW-DISCHARGE DEPOSITION PROCESS IN SILANE-HELIUM

被引:82
作者
TURBAN, G
CATHERINE, Y
GROLLEAU, B
机构
[1] Laboratoire de Physique Corpusculaire, Université de Nantes, 44072 Nantes Cédex, 2, rue de la Houssinière
关键词
D O I
10.1016/0040-6090(79)90185-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The kinetics of a low pressure (0.2 Torr) r.f. discharge in SiH4-He has been studied. The measured mass transport rate towards the wall is compared with the transport rate derived from a simplified mono-dimensional kinetic model. The silane decomposition is assumed to proceed mainly through electron impact, and only neutral radicals SiHn have been considered for the diffusional mass transport. A good agreement is found between the experimental and theoretical rates. The measurement of the mean electron density means that an activation constant for silane can be determined. The neutral species evolving from the plasma have been studied by mass spectrometry. The formation of disilane has been observed for pressures above about 0.5 Torr. © 1979.
引用
收藏
页码:147 / 155
页数:9
相关论文
共 10 条