2 DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON N-P-N TRANSISTOR

被引：45

作者：

HEIMEIER, HH ^{[1
]}

机构：

[1] TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 08期

关键词：

D O I：

10.1109/T-ED.1973.17732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：708 / 714

页数：7

共 15 条

[1] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE
ARANDJELOVIC, V
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +
[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[3] CHOO SC, 1971, IEEE T ELECTRON DEV, VED18, P574, DOI 10.1109/T-ED.1971.17244
[4] NUMERICAL SOLUTIONS FOR A ONE-DIMENSIONAL SILICON N-P-N TRANSISTOR
GOKHALE, BV
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (08) : 594 - &
[5] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS
GUMMEL, HK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) : 455 - &
[6] ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES
GWYN, CW
SCHARFETTER, DL
WIRTH, JL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 153 - +
[7] NEW EFFICIENT ONE-DIMENSIONAL ANALYSIS PROGRAM FOR JUNCTION DEVICE MODELING
HACHTEL, GD
JOY, RC
COOLEY, JW
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (01): : 86 - &
[8] STEADY-STATE TRANSISTOR CALCULATIONS FOR HIGHER COLLECTOR VOLTAGES
KURATA, M
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (03): : 485 - +
[9] SMALL-SIGNAL CALCULATION FOR ONE-DIMENSIONAL TRANSISTORS
KURATA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) : 200 - &
[10] MARI AD, 1968, SOLID STATE ELECTRON, V11, P1021

← 1 2 →