HYDROGEN PROFILING IN GAS-PHASE DOPED AND ION-IMPLANTED AMORPHOUS-SILICON FILMS

被引:13
作者
DEMOND, FJ [1 ]
MULLER, G [1 ]
DAMJANTSCHITSCH, H [1 ]
MANNSPERGER, H [1 ]
KALBITZER, S [1 ]
LECOMBER, PG [1 ]
SPEAR, WE [1 ]
机构
[1] UNIV DUNDEE,DUNDEE DD1 4HN,SCOTLAND
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词
D O I
10.1051/jphyscol:19814170
中图分类号
学科分类号
摘要
引用
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页码:779 / 782
页数:4
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