HYDROGEN PROFILING IN GAS-PHASE DOPED AND ION-IMPLANTED AMORPHOUS-SILICON FILMS

被引：13

作者：

DEMOND, FJ ^{[1
]}

MULLER, G ^{[1
]}

DAMJANTSCHITSCH, H ^{[1
]}

MANNSPERGER, H ^{[1
]}

KALBITZER, S ^{[1
]}

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,DUNDEE DD1 4HN,SCOTLAND

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814170

中图分类号：

学科分类号：

摘要：

引用

页码：779 / 782

页数：4

共 9 条

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[5] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON [J].

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MULLER, G ;

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SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04) :439-456

[6] HYDROGEN PROFILING IN AMORPHOUS-SILICON FILMS AND P-N-JUNCTIONS [J].

MULLER, G ;

DEMOND, F ;

KALBITZER, S ;

DAMJANTSCHITSCH, H ;

MANNSPERGER, H ;

SPEAR, WE ;

LECOMBER, PG ;

GIBSON, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (05) :571-579

[7]

REINELT M, 1981, THESIS HEIDELBERG

[8] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

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[9]

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