共 9 条
[2]
CARLSON DE, 1979, 2ND P EC PHOT SOL EN, P312
[3]
GIBSON RA, 1981, J PHYS-PARIS, V42, P1143
[4]
HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON
[J].
SOLAR ENERGY MATERIALS,
1979, 2 (01)
:93-106
[5]
THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1980, 41 (04)
:439-456
[6]
HYDROGEN PROFILING IN AMORPHOUS-SILICON FILMS AND P-N-JUNCTIONS
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1980, 41 (05)
:571-579
[7]
REINELT M, 1981, THESIS HEIDELBERG
[8]
ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
[J].
PHILOSOPHICAL MAGAZINE,
1976, 33 (06)
:935-949
[9]
ZELLAMA K, 1980, J NONCRYST SOLIDS, V35, P22