ELECTRICAL CHARACTERIZATION OF A SUPERLATTICE

被引：8

作者：

BOURGOIN, JC

MAUGER, A

STIEVENARD, D

DEVEAUD, B

REGRENY, A

机构：

[1] INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE

[2] CTR NATL TELECOMMUN,F-22301 LANNION,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 11期

关键词：

D O I：

10.1016/0038-1098(87)90042-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

12

引用

收藏

页码：757 / 759

页数：3

相关论文

共 12 条

[1] Bastard G., 1981, PHYS REV B, V24
[2] HYDROGENIC-IMPURITY GROUND-STATE IN GAAS-GA1-XALXAS MULTIPLE QUANTUM-WELL STRUCTURES
CHAUDHURI, S
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4480 - 4488
[3] OBSERVATION OF ONE MONOLAYER SIZE FLUCTUATIONS IN A GAAS/GAALAS SUPERLATTICE
DEVEAUD, B
EMERY, JY
CHOMETTE, A
LAMBERT, B
BAUDET, M
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1078 - 1080
[4] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE
ESAKI, L
CHANG, LL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498
[5] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS
LANG, DV
LOGAN, RA
KIMERLING, LC
[J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882
[6] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS
LANGER, JM
HEINRICH, H
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (13) : 1414 - 1417
[7] DEFECT IDENTIFICATION IN ELECTRON-IRRADIATED GAAS
LOUALICHE, S
GUILLOT, G
NOUAILHAT, A
BOURGOIN, J
[J]. PHYSICAL REVIEW B, 1982, 26 (12) : 7090 - 7092
[8] IRRADIATION-INDUCED DEFECTS IN GAAS
PONS, D
BOURGOIN, JC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20): : 3839 - 3871
[9] DEFECTS IN SUPERLATTICES
STIEVENARD, D
VUILLAUME, D
BOURGOIN, JC
DEVEAUD, B
REGRENY, A
[J]. EUROPHYSICS LETTERS, 1986, 2 (04): : 331 - 335
[10] STIEVENARD D, 1986, 18TH INT C PHYS SEM