DEFECT IDENTIFICATION IN ELECTRON-IRRADIATED GAAS

被引：30

作者：

LOUALICHE, S ^{[1
]}

GUILLOT, G ^{[1
]}

NOUAILHAT, A ^{[1
]}

BOURGOIN, J ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER, PHYS SOLIDES GRP, F-75221 PARIS 05, FRANCE

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.7090

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：7090 / 7092

页数：3

相关论文

共 18 条

[1] ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435
[2] DARWIN CG, 1913, PHILOS MAG, V25, P301
[3] EISEN FH, 1964, PHYS REV A-GEN PHYS, V135, P1394
[4] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES
GOSWAMI, NK
NEWMAN, RC
WHITEHOUSE, JE
[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477
[5] ELECTRICAL PROPERTIES OF ELECTRON-IRRADIATED GAAS
KALMA, AH
BERGER, RA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 209 - 214
[6] KRAVCHENKO AF, 1978, SOV PHYS SEMICOND+, V12, P952
[7] Lang D. V., 1977, I PHYS C SER, V31, P70
[8] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS
LANG, DV
KIMERLING, LC
LEUNG, SY
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3587 - 3591
[9] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS
LANG, DV
LOGAN, RA
KIMERLING, LC
[J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882
[10] LANG DV, 1975, I PHYS C SER, V23, P581