共 9 条
[1]
ETTENBERG M, 1971, J ELECTROCHEM SOC, V118, P13
[3]
HASEGAWA F, 1987, 19TH C SOL STAT DEV, P647
[4]
KAJIKAWA Y, M ELECTRON DEVICE GR
[5]
KAJIKAWA Y, TECHNICAL M ELECTRON
[6]
KOUKITSU A, 1976, JPN J APPL PHYS, V15, P1951
[7]
GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1986, 25 (03)
:L212-L214
[8]
USUI A, 1982, I PHYS C SER, V63, P137
[9]
Williams E.W., 1992, SEMICONDUCTOR SEMIME, V8, P321