VAPOR-PHASE EPITAXIAL-GROWTH OF ALAS BY CHLORIDE TRANSPORT METHOD

It was shown thermodynamically and experimentally that AlAs could be grown by the chloride transport method. The driving force was obtained in all temperature ranges analyzed (650-850 degree C). In the experiments, Al was supplied as an organometallic compounds, i. e. , Al(CH//3)//2Cl-(DMAC) or Al(CH//3)//3-(TMA) with a carrier gas of He, and arsenic was supplied by AsCl//3/(He plus 1% H//2) instead of AsH//3. DMAC or TMA is mixed with AsCl//3 to produce aluminum chloride at the source zone, and (AlCl plus AlCl//3) and As//4 are transported to the deposition zone. AlAs was deposited by introducing H//2 into the deposition zone, whose temperature is the same as that of the source zone (700-800 degree C).