CONDITIONS FOR VPE-GROWTH OF ALXGA1-XAS ALLOYS IN INORGANIC TRANSPORT-SYSTEMS

被引：10

作者：

BACHEM, KH ^{[1
]}

HEYEN, M ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,FESTKORPERELEKTR SFB 56,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90031-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：330 / 338

页数：9

共 16 条

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[10] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM [J].

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